Program - PESM 2025

Photonics, MEMS & Power Electronics (I)
Modelling und Simulation
Tool and Process Diagnostics
Poster Session
Conference Dinner

Photonics, MEMS & Power Electronics (II)
ALE and TAPE (pulsed processes)
FEOL and Memory
Quantum and Superconducting Applications
Outlook

Day 1 – Monday, June 16

9:15	Introduction ^{Danny Reuter, Fraunhofer ENAS, Germany}
9:25	tba ^{Frank Bösenberg, Silicon Saxony, Germany}

Photonics, MEMS & Power Electronics (I)

9:40	III-V Heterostructure Plasma Etching for Low Cost and High Efficiency Photonic Devices ^{Mathieu de Lafontaine, University of Ottawa, Canada}
10:00	3D patterning by electron beam and i-line grayscale lithography combined with RIE, DRIE and IBE for photonic applications ^{Christian Helke, Fraunhofer ENAS, Germany}
10:20	Coffee break
10:40	3D nanopatterning using ion beam technologies ^{Michael Zeuner, scia Systems, Germany}
11:00	Etched Micro-lens Roughness Generation and Gap Filling Study ^{Delia Ristoiu, STMicroelectronics, France}
11:20	High Etch Rate Silicon Carbide (SiC) Etching for Packaging Applications ^{Piotr Mackowiak, Fraunhofer IZM, Germany}
12:00	Lunch Break

Modelling und Simulation

13:00	Perspectives of AI in plasma processing ^{Johann Foucher, POLLEN, France}
13:20	A multiscale combination of ab initio, kinetic Monte Carlo and dynamic global model for modeling atomic layer etching of gallium nitride in chlorinated plasmas ^{Tojo Rasoanarivo, Institut des Matériaux de Nantes Jean Rouxel (IMN), France}
13:40	Simulation-driven development of halogen-free etching processes for semiconductor applications ^{Kristína Tomanková, PlasmaSolve, Czech Republic}
14:00	Accelerating low-pressure plasma etching simulations through physics-based modeling and machine learning ^{Eneri Boniakou, National Technical University of Athens, Greece}
14:20	Virtual Metrology for the Bosch Process: A Knowledge-Driven Approach to Spectral Data Compression ^{Stephan Zieger, Fraunhofer ENAS, Germany}
14:40	Coffee break

Tool and Process Diagnostics

15:00	Nanosecond-Sensing and Control of Radio-Frequency Driven Plasmas ^{Timo Gans, Dublin City University, Ireland}
15:20	Fiber PROES: a non-intrusive diagnostic for development and monitoring of plasma processes ^{Florian Beckfeld, Ruhr University Bochum, Germany}
15:40	Fault Classification for Deep Si Etch ^{Michael Klick, Plasmetrex, XFab, Germany}
16:00	Characterization of the SENTECH unique ICP plasma source (Planar Triple Spiral Antenna) to enhance process optimizations ^{Michael Höfner, SENTECH, Germany}

Poster Session

16:30

Poster-Session

Lateral Etching of Si_{1 – x}Ge_x Layers in CHF₃/O₂ Plasma
^{Steffen Marschmeyer, IHP microelectronics, Germany}
Plasma etching of BiSb nano patterns on GaAs (111)
^{Aurélie Lecestre, LAAS-CNRS, France}
Charged particle dynamics during Transient-Assisted Plasma Etching in Ar/Cl₂O₂/CH₄ mixtures
^{Jean-Paul Booth, LPP Sorbonne Université, France}
Fabrication of High-Performance Multi-Heterojunction 2D MoS₂ Photodetector by Atomic Layer Etching Process
^{Ji Eun Kang, Sungkyunkwan University, Republic of Korea}
Atomic Scale Engineering of CVD MoS₂: from n-type Doping to Phase Transition via Plasma Treatment
^{Jimin Kim, Sungkyunkwan University, Republic of Korea}
Isotropic Layer-by-Layer Etching of 2D MoS₂ using Organic Solvent Vapor
^{Hyewon Han, Sungkyunkwan University, Republic of Korea}
Optimizing HD TSV post-etch wet cleaning in an ecological way
^{Nicolas Le Brun, Univ. Grenoble Alpes, CEA-Leti, France}
Process Data-Driven Virtual Metrology for Bosch Etching: A Gaussian Process Approach Integrating Stationarity Analysis and Functional Principal Component Analysis
^{Zahra Mehraban, Fraunhofer ENAS, Germany}
Measurement and Development of Halogen-Free Plasma Etching Technologies for Sustainable Semiconductor Manufacturing
^{Georg Umlauf, Fraunhofer ENAS, Germany}
Cleaning of Transition Metal Dichalcogenides using H₂-based Transient Assisted Plasma Etching
^{Hritika Dongre, imec, Belgium}
Cleaning CNTs with transient assisted plasma etching (TAPE)
^{Patrick Kelp, imec, Belgium}
Analysis in Deep Reactive Ion Etching Processes Using Optical Emission Spectroscopy and k-Means Clustering
^{Tom Seifert, Fraunhofer ENAS, Germany}

Development of Halogen-Free Etching Chemistries for Si and SiO₂: A Screening Approach for Enhanced Reactivity
^{Bahareh Bamdad, Chemnitz University of Technology, Germany}

Green Reactive Ion Etching of Silicon Oxides for Microelectronic Application
^{Christoph Weigel, Ilmenau University of Technology, Germany}

Challenges of novel materials dry etch for quantum applications
^{Katharina Lilienthal, Fraunhofer IPMS, Germany}

Conference Dinner

17:45	Bus transfer
18:30	Conference Dinner

Day 2 – Tuesday, June 17

Photonics, MEMS & Power Electronics (II)

8:30	Reactive ion etching and new approaches for direct micro/nano-structuring of silicate substrates for MEMS and microelectronic applications ^{Christoph Weigel, TU Ilmenau, Germany}
8:50	Wet etching mechanisms of III-N materials under KOH ^{Lucas Jaloustre, Univ. Grenoble Alpes, CNRS, CEA-Leti, France}
9:10	Radicals flux optimized in “High Density Radical Flux” a remote plasma source design with multiplexed Inductively Coupled Plasma sources for organic and polymer removal or Post-Bosch process scallops smoothing ^{Marc Segers, PlasmaTherm, France}
9:30	New approach for Silicon Etching: Low-Pressure Vapor-Phase Metal-Assisted Chemical Etching via Catalytic Metal Nanostructures for Advanced Microfabrication ^{Vahide Hosseini, Fraunhofer ENAS, Germany}
9:50	Coffee break

ALE and TAPE (pulsed processes)

10:10	Transient Assisted Processing (TAP): An Optimized Balance of Sustainability, Precision, and Throughput for Advanced Processing ^{Atefeh Fathzadeh, imec, Belgium}
10:30	Surface Treatment of (Al)GaN with BCl₃ Plasma : Ion Energy Effects and Their Implications for Atomic Layer Etching ^{Nikolai Andrianov, Silicon Austria Labs GmbH, Austria}
10:50	Quasi-ALE process transfer from lab to 300mm fab and its optimisation ^{Jenefa Kannan, Fraunhofer IPMS, Germany}
11:10	Atomic Layer Etching for Topographical Selective Deposition in PEALD Chamber ^{Thierry Chevolleau, CEA-Leti, France}
11:30	Advancing Low-k Dielectric etching: Pulsed Plasma effects on surface damage, ion energy and sidewall chemistry ^{Abhishek Vatsal, Fraunhofer IPMS, Germany}
11:50	Lunch break

FEOL and Memory

13:00	Silicon Nitride Etch Enhancement by Hydrogen Modification for Electrical Contact Integration in Advance FDSOI Technologies ^{Ramy Ayoub, CEA-Leti, France}
13:20	Selective etching of amorphous Carbon for SiO₂ hard mask patterning under ICP-RIE conditions in a C₄F₈/H₂ gas mixture ^{Iurii Nesterenko, Silicon Austria Labs GmbH, Austria}
13:40	Optimizing HfZrO₂ film thinning by plasma etching for ferroelectric memories^{Vincent Michaud, Univ. Grenoble Alpes, CEA-Leti, France}
14:00	Plasma-surface characterization during vanadium oxide (V₂O₃) thin films etching process in SF₆-Ar plasma ^{Tatiana Signe, Institut des Matériaux de Nantes Jean Rouxel (IMN), France}
14:20	Coffee break

Quantum and Superconducting Applications

14:40	Superconducting BEOL for quantum applications ^{Fabrice Nemouchi, CEA-Leti, France}
15:00	Manufacturing silicon qubits as we manufacture transistors ^{Nicolas Daval, quobly, France}
15:20	Aluminium overlap Josephson junction patterning and its dry etch challenges^{Yann Canvel, imec, Belgium}

Outlook

15:40	Etch challenges for the next decade: which etch approach will be the most suited? ^{Philippe Bezard, imec, Belgium}
16:00	Closing remarks