{"id":52,"date":"2025-01-15T10:46:37","date_gmt":"2025-01-15T09:46:37","guid":{"rendered":"https:\/\/pesm.memsfab.de\/2025\/?page_id=52"},"modified":"2025-06-18T09:18:09","modified_gmt":"2025-06-18T07:18:09","slug":"program","status":"publish","type":"page","link":"https:\/\/pesm.memsfab.de\/2025\/program\/","title":{"rendered":"Program"},"content":{"rendered":"\n<p><a href=\"#day1\">Day 1 &#8211; Monday, June 16<\/a><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li><a href=\"#mems1\">Photonics, MEMS &amp; Power Electronics (I)<\/a><\/li>\n\n\n\n<li><a href=\"#modelling\">Modelling und Simulation<\/a><\/li>\n\n\n\n<li><a href=\"#diagnostics\">Tool and Process Diagnostics<\/a><\/li>\n\n\n\n<li><a href=\"#poster\">Poster Session<\/a><\/li>\n\n\n\n<li><a href=\"#dinner\">Conference Dinner<\/a><\/li>\n<\/ul>\n\n\n\n<p><a href=\"#day2\">Day 2 &#8211; Tuesday, June 17<\/a><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li><a href=\"#photonics2\">Photonics, MEMS &amp; Power Electronics (II)<\/a><\/li>\n\n\n\n<li><a href=\"#ale\">ALE and TAPE (pulsed processes)<\/a><\/li>\n\n\n\n<li><a href=\"#feol\">FEOL and Memory<\/a><\/li>\n\n\n\n<li><a href=\"#quantum\">Quantum and Superconducting Applications<\/a><\/li>\n\n\n\n<li><a href=\"#outlook\">Outlook<\/a><\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\" id=\"day1\">Day 1 &#8211; Monday, June 16<\/h2>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">9:15<\/td><td><strong>Introduction<br><\/strong><em><sup>Danny Reuter, Fraunhofer ENAS, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">9:25<\/td><td><strong>tba<\/strong><br><em><sup>Frank B\u00f6senberg, Silicon Saxony, Germany<\/sup><\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"mems1\">Photonics, MEMS &amp; Power Electronics (I)<\/h3>\n\n\n\n<figure class=\"wp-block-table is-style-regular\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">9:40<\/td><td><strong>III-V Heterostructure Plasma Etching for Low Cost and High Efficiency Photonic Devices<br><\/strong><em><sup>Mathieu de Lafontaine, University of Ottawa, Canada<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">10:00<\/td><td><strong>3D patterning by electron beam and i-line grayscale lithography combined with RIE, DRIE and IBE for photonic applications<\/strong><br><em><sup>Christian Helke, Fraunhofer ENAS, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">10:20<\/td><td><em>Coffee break<\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">10:40<\/td><td><strong>3D nanopatterning using ion beam technologies<br><\/strong><em><sup>Michael Zeuner, scia Systems, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">11:00<\/td><td><strong>Etched Micro-lens Roughness Generation and Gap Filling Study<\/strong><br><em><sup>Delia Ristoiu, STMicroelectronics, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">11:20<\/td><td><strong>High Etch Rate Silicon Carbide (SiC) Etching for Packaging Applications<br><\/strong><em><sup>Piotr Mackowiak, Fraunhofer IZM, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">11:40<\/td><td><strong>Cl2\/H2 plasma etching of InGaP for photovoltaic devices<br><\/strong><em><sup>Alison Clarke, University of Ottawa, Canada<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">12:00<\/td><td><em>Lunch Break<\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"modelling\">Modelling und Simulation<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">13:00<\/td><td><strong>From Data to Decisions: Collaborative AI in Plasma Processing<br><\/strong><em><sup>Johann Foucher, POLLEN, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">13:20<\/td><td><strong>A multiscale combination of ab initio, kinetic Monte Carlo and dynamic global model for modeling atomic layer etching of gallium nitride in chlorinated plasmas<\/strong><br><em><sup>Tojo Rasoanarivo, Institut des Mat\u00e9riaux de Nantes Jean Rouxel (IMN), France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">13:40<\/td><td><strong>Simulation-driven development of halogen-free etching processes for semiconductor applications<\/strong><br><em><sup>Krist\u00edna Tomankov\u00e1, PlasmaSolve, Czech Republic<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">14:00<\/td><td><strong>Accelerating low-pressure plasma etching simulations through physics-based modeling and machine learning<br><\/strong><em><sup>Eneri Boniakou, National Technical University of Athens, Greece<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">14:20<\/td><td><strong>Virtual Metrology for the Bosch Process: A Knowledge-Driven Approach to Spectral Data Compression<br><\/strong><sup><em>Stephan Zieger, Fraunhofer ENAS, Germany<\/em><\/sup><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">14:40<\/td><td><em>Coffee break<\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"diagnostics\">Tool and Process Diagnostics<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">15:00<\/td><td><strong>Nanosecond-Sensing and Control of Radio-Frequency Driven Plasmas<\/strong><br><em><sup>Timo Gans, Dublin City University, Ireland<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">15:20<\/td><td><strong>Fiber PROES: a non-intrusive diagnostic for development and monitoring of plasma processes<br><\/strong><em><sup>Florian Beckfeld, Ruhr University Bochum, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">15:40<\/td><td><strong>Fault Classification for Deep Si Etch<br><\/strong><em><sup>Michael Klick, Plasmetrex, XFab, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">16:00<\/td><td><strong>Characterization of the SENTECH unique ICP plasma source (Planar Triple Spiral Antenna) to enhance process optimizations<\/strong><br><em><sup>Michael H\u00f6fner, SENTECH, Germany<\/sup><\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"poster\">Poster Session<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">16:30<\/td><td><em>Poster-Session<\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\"><\/td><td><strong>Lateral Etching of Si<sub>1 \u2013 x<\/sub>Ge<sub>x<\/sub>&nbsp;Layers in CHF<sub>3<\/sub>\/O<sub>2<\/sub>&nbsp;Plasma<br><\/strong><em><sup>Steffen Marschmeyer, IHP microelectronics, Germany<br><\/sup><\/em><br><strong>Plasma etching of BiSb nano patterns on GaAs (111)<br><\/strong><em><sup>Aur\u00e9lie Lecestre, LAAS-CNRS, France<br><\/sup><\/em><br><strong>Charged particle dynamics during Transient-Assisted Plasma Etching in Ar\/O<sub>2<\/sub>&nbsp;mixtures<br><\/strong><em><sup>Jean-Paul Booth, LPP Sorbonne Universit\u00e9, France<br><\/sup><\/em><br><strong>Fabrication of High-Performance Multi-Heterojunction 2D MoS<sub>2<\/sub>&nbsp;Photodetector by Atomic Layer Etching Process<br><\/strong><em><sup>Ji Eun Kang, Sungkyunkwan University, Republic of Korea<br><\/sup><\/em><br><strong>Atomic Scale Engineering of CVD MoS<sub>2<\/sub>: from n-type Doping to Phase Transition via Plasma Treatment<br><\/strong><sup><em>Jimin Kim, Sungkyunkwan University, Republic of Korea<br><\/em><\/sup><br><strong>Isotropic Layer-by-Layer Etching of 2D MoS<sub>2<\/sub>&nbsp;using Organic Solvent Vapor<br><\/strong><sup><em>Hyewon Han, Sungkyunkwan University, Republic of Korea<br><\/em><\/sup><br><strong>Optimizing HD TSV post-etch wet cleaning in an ecological way<br><\/strong><em><sup>Nicolas Le Brun, Univ. Grenoble Alpes, CEA-Leti, France<br><\/sup><\/em><br><strong>Process Data-Driven Virtual Metrology for Bosch Etching: A Gaussian Process Approach Integrating Stationarity Analysis and Functional Principal Component Analysis<br><\/strong><em><sup>Zahra Mehraban, Fraunhofer ENAS, Germany<br><\/sup><\/em><br><strong>Measurement and Development of Halogen-Free Plasma Etching Technologies for Sustainable Semiconductor Manufacturing<br><\/strong><em><sup>Georg Umlauf, Fraunhofer ENAS, Germany<br><\/sup><\/em><br><strong>Cleaning of Transition Metal Dichalcogenides using H<sub>2<\/sub>-based Transient Assisted Plasma Etching<br><\/strong><em><sup>Hritika Dongre, imec, Belgium<br><\/sup><\/em><br><strong>Cleaning CNTs with transient assisted plasma etching (TAPE)<br><\/strong><em><sup>Patrick Kelp, imec, Belgium<br><\/sup><\/em><br><strong>Analysis in Deep Reactive Ion Etching Processes Using Optical Emission Spectroscopy and k-Means Clustering<br><\/strong><sup><em>Tom Seifert, Fraunhofer ENAS, Germany<\/em><\/sup><br><br><strong>Development of Halogen-Free Etching Chemistries for Si and SiO\u2082: A Screening Approach for Enhanced Reactivity<br><\/strong><sup><em>Bahareh Bamdad, Chemnitz University of Technology, Germany<\/em><\/sup><br><br><strong>Green Reactive Ion Etching of Silicon Oxides for Microelectronic Application<br><\/strong><sup><em>Christoph Weigel, Ilmenau University of Technology, Germany<\/em><\/sup><br><br><strong>Challenges of novel materials dry etch for quantum applications<br><\/strong><sup><em>Katharina Lilienthal, Fraunhofer IPMS, Germany<\/em><\/sup><br><br><strong>In-situ determination of molecule concentrations in real time &#8211; key process indicators for the active control of plasma processes<br><\/strong><sup><em>Henrik Zimmermann, neoplas control GmbH, Germany<\/em><\/sup><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"dinner\">Conference Dinner<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">17:45<\/td><td><em>Bus transfer<\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">18:30<\/td><td><em>Conference Dinner<\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\"><\/h3>\n\n\n\n<h2 class=\"wp-block-heading\" id=\"day2\">Day 2 &#8211; Tuesday, June 17<\/h2>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"photonics2\">Photonics, MEMS &amp; Power Electronics (II)<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">8:30<\/td><td><strong>Reactive ion etching and new approaches for direct micro\/nano-structuring of silicate substrates for MEMS and microelectronic applications<br><\/strong><em><sup>Christoph Weigel, TU Ilmenau, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">8:50<\/td><td><strong>Wet etching mechanisms of III-N materials under KOH<\/strong><br><em><sup>Lucas Jaloustre, Univ. Grenoble Alpes, CNRS, CEA-Leti, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">9:10<\/td><td><strong>Radicals flux optimized in \u201cHigh Density Radical Flux\u201d a remote plasma source design with multiplexed Inductively Coupled Plasma sources for organic and polymer removal or Post-Bosch process scallops smoothing<br><\/strong><em><sup>Marc Segers, PlasmaTherm, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">9:30<\/td><td><strong>New approach for Silicon Etching: Low-Pressure Vapor-Phase Metal-Assisted Chemical Etching via Catalytic Metal Nanostructures for Advanced Microfabrication<br><\/strong><em><sup>Vahide Hosseini, Fraunhofer ENAS, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">9:50<\/td><td><em>Coffee break<\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"ale\">ALE and TAPE (pulsed processes)<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">10:10<\/td><td><strong>Transient Assisted Processing (TAP): An Optimized Balance of Sustainability, Precision, and Throughput for Advanced Processing<\/strong><br><em><sup>Atefeh Fathzadeh, imec, Belgium<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">10:30<\/td><td><strong>Surface Treatment of (Al)GaN with BCl\u2083 Plasma : Ion Energy Effects and Their Implications for Atomic Layer Etching<br><\/strong><em><sup>Nikolai Andrianov, Silicon Austria Labs GmbH,\u202fAustria<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">10:50<\/td><td><strong>Quasi-ALE process transfer from lab to 300mm fab and its optimisation<br><\/strong><em><sup>Jenefa Kannan, Fraunhofer IPMS, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">11:10<\/td><td><strong>Atomic Layer Etching for Topographical Selective Deposition in PEALD Chamber<br><\/strong><em><sup>Thierry Chevolleau, CEA-Leti, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">11:30<\/td><td><strong>Advancing Low-k Dielectric etching: Pulsed Plasma effects on surface damage, ion energy and sidewall chemistry<br><\/strong><em><sup>Abhishek Vatsal, Fraunhofer IPMS, Germany<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">11:50<\/td><td><em>Lunch break<\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"feol\">FEOL and Memory<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">13:00<\/td><td><strong>Silicon Nitride Etch Enhancement by Hydrogen Modification for Electrical Contact Integration in Advance FDSOI Technologies<br><\/strong><em><sup>Ramy Ayoub, CEA-Leti, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">13:20<\/td><td><strong>Selective etching of amorphous Carbon for SiO<sub>2<\/sub>&nbsp;hard mask patterning under ICP-RIE conditions in a C<sub>4<\/sub>F<sub>8<\/sub>\/H<sub>2<\/sub>&nbsp;gas mixture<br><\/strong><em><sup>Iurii Nesterenko, Silicon Austria Labs GmbH,\u202fAustria<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">13:40<\/td><td><strong>Optimizing HfZrO<sub>2<\/sub>&nbsp;film thinning by plasma etching for ferroelectric memories<\/strong><em><sup><br>Vincent Michaud, Univ. Grenoble Alpes, CEA-Leti, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">14:00<\/td><td><strong>Plasma-surface characterization during vanadium oxide (V<sub>2<\/sub>O<sub>3<\/sub>) thin films etching process in SF<sub>6<\/sub>-Ar plasma<br><\/strong><em><sup>Tatiana Chancelle Mbouja Signe,<\/sup><\/em><br><em><sup>Institut des Mat\u00e9riaux de Nantes Jean Rouxel (IMN), France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">14:20<\/td><td><em>Coffee break<\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"quantum\">Quantum and Superconducting Applications<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">14:40<\/td><td><strong>Superconducting BEOL for quantum applications<\/strong><br><em><sup>Fabrice Nemouchi, CEA-Leti, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">15:00<\/td><td><strong>Making qubits as we make transistors: the same silicon technology with a twist in the performance optimization<\/strong><br><em><sup>Nicolas Daval, quobly, France<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">15:20<\/td><td><strong>Aluminium overlap Josephson junction patterning and its dry etch challenges<\/strong><em><sup><br>Yann Canvel, imec, Belgium<\/sup><\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<h3 class=\"wp-block-heading\" id=\"outlook\">Outlook<\/h3>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td class=\"has-text-align-center\" data-align=\"center\">15:40<\/td><td><strong>Etch challenges for the next decade: which etch approach will be the most suited?<\/strong><br><em><sup>Philippe Bezard, imec, Belgium<\/sup><\/em><\/td><\/tr><tr><td class=\"has-text-align-center\" data-align=\"center\">16:00<\/td><td><em>Closing remarks<\/em><\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<p><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Day 1 &#8211; Monday, June 16 Day 2 &#8211; Tuesday, June 17 Day 1 &#8211; Monday, June 16 9:15 IntroductionDanny Reuter, Fraunhofer ENAS, Germany 9:25 tbaFrank B\u00f6senberg, Silicon Saxony, Germany Photonics, MEMS &amp; Power Electronics (I) 9:40 III-V Heterostructure Plasma Etching for Low Cost and High Efficiency Photonic DevicesMathieu de Lafontaine, University of Ottawa, Canada [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-52","page","type-page","status-publish","hentry"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.4 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Program - PESM 2025<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/pesm.memsfab.de\/2025\/program\/\" \/>\n<meta property=\"og:locale\" content=\"de_DE\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Program - PESM 2025\" \/>\n<meta property=\"og:description\" content=\"Day 1 &#8211; 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Monday, June 16 Day 2 &#8211; Tuesday, June 17 Day 1 &#8211; Monday, June 16 9:15 IntroductionDanny Reuter, Fraunhofer ENAS, Germany 9:25 tbaFrank B\u00f6senberg, Silicon Saxony, Germany Photonics, MEMS &amp; Power Electronics (I) 9:40 III-V Heterostructure Plasma Etching for Low Cost and High Efficiency Photonic DevicesMathieu de Lafontaine, University of Ottawa, Canada [&hellip;]","og_url":"https:\/\/pesm.memsfab.de\/2025\/program\/","og_site_name":"PESM 2025","article_modified_time":"2025-06-18T07:18:09+00:00","twitter_card":"summary_large_image","twitter_misc":{"Gesch\u00e4tzte Lesezeit":"6\u00a0Minuten"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"WebPage","@id":"https:\/\/pesm.memsfab.de\/2025\/program\/","url":"https:\/\/pesm.memsfab.de\/2025\/program\/","name":"Program - PESM 2025","isPartOf":{"@id":"https:\/\/pesm.memsfab.de\/2025\/#website"},"datePublished":"2025-01-15T09:46:37+00:00","dateModified":"2025-06-18T07:18:09+00:00","breadcrumb":{"@id":"https:\/\/pesm.memsfab.de\/2025\/program\/#breadcrumb"},"inLanguage":"de","potentialAction":[{"@type":"ReadAction","target":["https:\/\/pesm.memsfab.de\/2025\/program\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/pesm.memsfab.de\/2025\/program\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Startseite","item":"https:\/\/pesm.memsfab.de\/2025\/"},{"@type":"ListItem","position":2,"name":"Program"}]},{"@type":"WebSite","@id":"https:\/\/pesm.memsfab.de\/2025\/#website","url":"https:\/\/pesm.memsfab.de\/2025\/","name":"PESM 2025","description":"Plasma Etch And Strip In Microtechnology","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/pesm.memsfab.de\/2025\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"de"}]}},"_links":{"self":[{"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/pages\/52","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/comments?post=52"}],"version-history":[{"count":35,"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/pages\/52\/revisions"}],"predecessor-version":[{"id":345,"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/pages\/52\/revisions\/345"}],"wp:attachment":[{"href":"https:\/\/pesm.memsfab.de\/2025\/wp-json\/wp\/v2\/media?parent=52"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}